Active Components
Lesson 4 of 7beginner
20 min read

MOSFETs

N-channel / P-channel, gate drive, switching applications

Theory

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What is a MOSFET?

A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch. Unlike a BJT, which needs continuous base current, a MOSFET is controlled by voltage at the gate terminal — it draws virtually no steady-state current. This makes MOSFETs ideal for power switching, motor control, and anything driven by microcontrollers.

The Three Terminals

  • •Gate (G) — the control terminal. Voltage here turns the MOSFET on or off. Draws almost no current (just charges the gate capacitance).
  • •Drain (D) — where current enters (N-channel) or exits (P-channel). Connects to the load.
  • •Source (S) — output terminal. Usually connected to ground (N-ch) or V_CC (P-ch).

N-Channel vs P-Channel

  • •N-channel (most common) — turns ON when V_GS > V_th (gate is positive relative to source). Used for low-side switching (load between V_CC and drain, source to ground).
  • •P-channel — turns ON when V_GS < āˆ’V_th (gate is more negative than source). Used for high-side switching (source to V_CC, load between drain and ground).
  • •N-channel MOSFETs generally have lower R_DS(on) and are cheaper, so they're preferred whenever possible.
Key Concept
A MOSFET is controlled by voltage, not current. This is the key difference from a BJT. The gate is essentially a tiny capacitor — you charge it to turn on, discharge it to turn off.

Threshold Voltage (V_th)

The threshold voltage is the minimum gate-to-source voltage needed to start turning the MOSFET on. For standard MOSFETs, V_th is typically 2–4 V. For logic-level MOSFETs, V_th is lower (~1–2 V), allowing them to be driven directly by 3.3 V or 5 V microcontroller pins.

Warning
If your microcontroller outputs 3.3 V, you MUST use a logic-level MOSFET (V_th < 2 V). A standard MOSFET with V_th = 4 V won't fully turn on with 3.3 V at the gate.

On-Resistance: R_DS(on)

When fully on, the MOSFET acts like a small resistance between drain and source called R_DS(on). Lower R_DS(on) means less power wasted as heat. For a logic-level MOSFET like the IRLZ44N, R_DS(on) is about 22 mĪ© at V_GS = 10 V. The power dissipated is P = I_D² Ɨ R_DS(on).

Using a MOSFET as a Switch

  • •Connect the load between V_CC and the drain.
  • •Connect the source to ground.
  • •Apply a voltage > V_th to the gate to turn on. Connect gate to ground to turn off.
  • •Add a 10 kĪ© pull-down resistor from gate to source to ensure the MOSFET stays off when no signal is applied.
  • •For fast switching (PWM), add a gate driver or low-value gate resistor (100–470 Ī©) to charge/discharge the gate capacitance quickly.

MOSFET vs BJT — When to Use Which

  • •MOSFETs: high-current switching (motors, LED strips, heaters), PWM control, battery-powered devices (no gate current wasted).
  • •BJTs: small-signal amplification, simple low-current switches, when you need a linear amplifier.
  • •MOSFETs scale better: switching 10 A with a BJT requires a large base current from the controller. A MOSFET does it with almost zero steady-state current.
  • •MOSFETs have a parasitic body diode (drain → source in N-ch), which can be useful or problematic depending on the application.

Popular MOSFET Types

  • •IRLZ44N — logic-level N-ch, 55V / 47A, R_DS(on) = 22 mĪ©. Great for 5 V Arduino projects.
  • •IRLB8721 — logic-level N-ch, 30V / 62A, R_DS(on) = 8.7 mĪ©. Excellent for high-current LED strips.
  • •IRF540N — standard N-ch, 100V / 33A. Needs ~10 V gate drive, not suitable for direct 3.3 V/5 V driving.
  • •AO3401 — small P-ch SOT-23, 30V / 4A. Popular for high-side switching in battery circuits.

Formulas

Interactive Diagram

Interactive Circuit Diagram

12.0V10ΩI = 1.20AP = 14.40W
12V
3V24V
10Ī©
1Ω100Ω

Calculator

V=IƗRV = I \times R

Enter any 2 values to calculate the rest

Circuit Challenges

Challenge 1 of 2
MOSFET Power Dissipation

An IRLZ44N (R_DS(on) = 22 mΩ) is switching 8 A for an LED strip. How much power does the MOSFET dissipate?

P=ID2ƗRDS(on)P = I_D^2 \times R_{DS(on)}
+āˆ’12V22mĪ©MOSFETA
8A
0.022Ī©
? W

Calculate & fill in:

W

Knowledge Check

Question 1 of 5

How is a MOSFET controlled, compared to a BJT?